RF Sensing Technology

NON-INVASIVE, CLAMP-ON RF DETECTOR DELIVERS HIGH-SPEED ARC DETECTION IN iPVD, PECVD AND ETCH Reducing Wafer Loss and Improving Yields Arcing during plasma processing can result in target and chamber damage leading to substrate damage and particle creation. As feature sizes decrease, microelectronic devices become increasingly susceptible to arc-induced damage. Arcing can occur in any plasma assisted process such as ionized Physical Vapor Deposition (iPVD), Plasma Enhanced Chemical Vapor Deposition (PECVD) and Etch. The INFICON Sion Arc Detector provides a crucial first line of defense. Sion makes it possible to detect micro-arcs quickly and react to them before significant damage or scrap occurs. The system provides real-time detection and analysis of plasma micro-arcing events.

The ADC100 system connects to a DC power generator in order to detect plasma arcing in real time. This provides the ability to interrupt a wafer process and notify engineers of potential hardware or product damage.

RF Sensor with FabGuard Provides Real-time Plasma Process Analysis to Significantly Reduce Process Variability INFICON RF sensor technology provides highly accurate, broadband, frequency discriminant RF measurement for semiconductor processing tools. This RF data provides detailed insight on actual plasma conditions of both process development and production process problems to significantly reduce process variability. The latest in its suite of advanced process control in situ sensors, this non-intrusive in-line cable mount RF sensor combines with FabGuard Sensor Integration and Analysis Systemto offer critical diagnostic information, e.g. accurate chamber and process power and impedance measurement, root cause analysis of faults (such as matching network problems), process fingerprinting for chamber matching, and wafer metrology modeling in PVD, CVD and etch applications. INFICON RF sensor technology with FabGuard generates highly accurate models that predict wafer metrology...